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Shanmuganantham, T.
- Analytical Modelling of Low Pressure Single Boss Sculptured Diaphragm and its Sensitivity Enhancement
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Authors
Affiliations
1 Department of Electronics and Instrumentation Engineering, Pondicherry Engineering College, IN
2 Department of Electronics Engineering, Pondicherry University, IN
1 Department of Electronics and Instrumentation Engineering, Pondicherry Engineering College, IN
2 Department of Electronics Engineering, Pondicherry University, IN
Source
ICTACT Journal on Microelectronics, Vol 1, No 3 (2015), Pagination: 124-130Abstract
The low pressure is measured by using thin Sculptured diaphragm using micro system fabrication technology. The thickness of this diaphragm is reduced to improve sensitivity is achieved by boss like structure to increase the stiffness and reduce nonlinear deflection. This paper brings out the optimum design for single boss sculptured diaphragm. The burst pressure thickness is used to achieve the maximum possible sensitivity. The maximum stress regions identified for the proper placement of four polysilicon piezoresistors which are wired in the form of wheat stone bridge arrangement to estimate the electrical output. The results are obtained using Intellisuite MEMS CAD design tool. Mathematical modelling of single boss sculptured diaphragm results were compared with simulated results. Further the enhancement of sensitivity is analyzed using nonuniform thickness diaphragm and SOI technique. In this paper the low pressure analyzed in the range of (0-1000Pa). The simulation results indicate that the single boss square sculptured diaphragm with 0.9μm yields the higher voltage sensitivity, acceptable linearity with Small Scale Deflection.Keywords
Burst Pressure, Shape, Stress, Single Boss Sculptured Diaphragm, Nonuniform Thickness Diaphragm and SOI.
References
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- K. Sivakumar, N. Dasgupta, K.N. Bhat and K. Natarajan, “Sensitivity Enhancement of Polysilicon Piezoresistive Pressure Sensors with Phosporous Diffused Resistors”, Journal of Physics: Conference series, Vol. 34, No. 1, pp. 216-221, 2006.
- Xiaodong Wang, Baoqing Li, Onofrio L. Russo, Harry T. Roman, Ken K. Chin and Kenneth R. Farmer, “Diaphragm Design Guidelines and an Optical Pressure Sensor Based on MEMS Technique”, Microelectronics Journal, Vol. 37, No. 1, pp. 50-56, 2006.
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- Vidhya Balaji and K.N. Bhat, “A Comparison of Burst Strength and Linearity of Pressure Sensors Having Thin Diaphragms of Different Shapes”, Journal of Institute of Smart Structures And Systems, Vol. 2, No. 2, pp. 18-26, 2012.
- K.N. Bhat and M.M. Nayak, “MEMS Pressure Sensors–An Overview of Challenges in Technology and Packaging”, Journal of Institute of Smart Structures and Systems, Vol. 2, No. 1, pp. 39-71, 2013.
- M. Narayanaswamy, R. Joseph Daniel and K. Sumangala, “Peizoresistor Size and Placement Effect on Sensitivity of Silicon-On-Insulator Piezoresistive Pressure Sensor”, Journal of Instrument Society of India, Vol. 43, No. 3, pp. 208-211, 2013.
- M. Rajavelu, D. Sivakumar, R. Joseph Daniel and K. Sumangala, “Perforated Diaphragms Employed Piezoresistive MEMS Pressure Sensor for Sensitivity Enhancement in Gas Flow Measurement”, Flow Measurement and Instrumentation, Vol. 35, pp. 63-75, 2014.
- D. Sindhanaiselvi, R. Ananda Natarajan and T. Shanmuganantham, “Performance Analysis of Sculptured Diaphragm for Low Pressure MEMS Sensors”, Applied Mechanics and Materials, Vol. 592-594, pp. 2193-2198, 2014.
- D. Sindhanaiselvi, R. Ananda Natarajan and T. Shanmuganantham, “Design and Optimization of Low Pressure Sculptured Diaphragm with Burst Pressure, Stress Analysis and its Enhancement”, International Journal of Applied Engineering Research, Vol. 10, No.24, pp. 21075-21081, 2015.
- Design of Micro Sensor with Cantilever Beam for Temperature Measurement
Abstract Views :195 |
PDF Views:0
Authors
Affiliations
1 Department of Electronics Engineering, Pondicherry University, IN
1 Department of Electronics Engineering, Pondicherry University, IN
Source
ICTACT Journal on Microelectronics, Vol 2, No 3 (2016), Pagination: 269-272Abstract
MEMS are systems of tiny devices, easy weight, enhanced performance and dependability detecting wider applications field of industrial, automotive and environment area, particularly in expressions of weather monitoring and estimate. In this work, design and simulation of MEMS sensor for temperature applications was proposed. An inherent platinum material for use temperature sensor can absolutely detect the sensor's working for temperature. The MEMS sensor is a single of the bimorph cantilever which deflections are felt by application of temperature. Basically, the cantilevers are thermally annealed to relax the thin film stresses. By changing the materials of bimorph, overall sensitivity can be changed. We use both platinum and titanium as the sensing material of temperature sensor to design process to integrate mechanical sensors into for example temperature for micro weather station. Finally, the proposed design can be used as a temperature sensor from 10°C to 60°C and also we obtained platinum as a good sensing material for detecting the temperature.Keywords
MEMS Sensor, Temperature, Cantilever, Displacement, Sensitivity.- Design and Analysis of Perforated Si-Diaphragm Based MEMS Pressure Sensor for Environmental Applications
Abstract Views :179 |
PDF Views:0
Authors
Affiliations
1 Department of Electronics Engineering, Pondicherry University, IN
1 Department of Electronics Engineering, Pondicherry University, IN
Source
ICTACT Journal on Microelectronics, Vol 2, No 1 (2016), Pagination: 209-215Abstract
The design is advanced which is an intelligent of calculating the output responses of perforated Si-diaphragm pressure sensor as a behavior of pressure and which compare them to piezoresistive Si-diaphragm. The systematic models based on small and large deflection theories have been applied to conclude the sensitivity and linearity of pressure sensors. The main aim of this paper was to design, simulate and analyze the sensitivity of both perforated and non-perforated Si-diaphragm based MEMS sensor to measure the linearity pressure values. The outer-micro machined diaphragms with square shapes are designed and tested to verify the simulation tool. The Intellisuite MEMS design tool has been used to produce and analyze the pressure sensors with perforated and Piezoresistive Si-Diaphragms. Here the study of sensor incorporating square diaphragm with piezoresistive and perforated Si-diaphragm were achieved and compared to realize the pressure sensitive components. In this perforated Si-diaphragm based pressure sensor has been illustrated to measure pressure range of 0.1MPa to 1Mpa. These simulation results have been formalized by comparing the deflection response estimated with piezoresistive Si-diaphragm model that is originated in this work by suitably modifying the bending of piezoresistive Si-diaphragms taking the perforation into account. Therefore a perforated Si-diaphragm based pressure sensor produced better displacement, sensitivity and stress output responses compared with the other type.Keywords
MEMS, Perforated Diaphragm, Displacement, Mises Stress and Sensitivity.- Analysis of Complementary Beam Structured RF MEMS Switch for Wireless Applications
Abstract Views :282 |
PDF Views:0
Authors
Affiliations
1 Department of Electronics Engineering, Pondicherry University, IN
1 Department of Electronics Engineering, Pondicherry University, IN
Source
ICTACT Journal on Microelectronics, Vol 2, No 4 (2017), Pagination: 329-332Abstract
This paper analysis the performance of a RF MEMS switch having a complementary beam structure operating at frequency ranging from 0 to 12GHz, which facilitates its application in the field of wireless mobile communication. This design is a modified cantilever beam forming a complementary structure with an easy fabrication process to implement. The switch is designed in form of a meander beam spring type in order to lower the spring constant there by achieving a relatively less pull-in voltage for actuation. The simulated results show a pull-in voltage of about 4V with the complementary cantilever beam structure. RF analysis shows a negligible insertion loss of -0.113dB and -7.181dB in the up-state of the switch from 0 to 12GHz. The isolation in the up-state was -57.62dB at 12GHz.Keywords
RF MEMS, Switch, Cantilever Beam, Pull-in Voltage, Electrostatic Actuation, Coplanar Waveguide.References
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- R. Raman and T. Shanmuganantham, “Analysis of DC-Metal Contact RF MEMS Switch with Split Beam Structure for Wireless Application”, International Journal on Communications Antenna and Propagation, Vol. 5, No. 6, 2015.
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